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The Nanophotonics lab, since 2006, is working towards the growth, characterization and fabrication of III-V semiconductor nanowires (NWs) for nanowire based devices. The NWs are grown using the molecular beam epitaxy(MBE) in department of electronics and telecommunications, NTNU. The structural characterization of the NWs are done in TEM Gemini centre, NTNU. Our ultimate aim of the project is to fabricate single nanowire based devices such as nanowire laser, nanowire solarcell and other nanowire based devices. The processing and fabrication of nanowire based devices are done in NTNU nanolab.
SEM image of GaAs NWs
SEM image of GaAs NWs contacted with electrodes
News:
2011
- 16/09: NW group meeting in E404 at 13:15.
- 08-09/09: Results presented at PDI Topical workshop on MBE-grown Arsenide Nanowires, Berlin.
- 02/09: NW Group meeting in B343 at 13:15.
- 27/08: Nanowire group dinner at Egon Restaurant.
