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- Scanning Electron Microscopy and Transmission Electron Microscopy images of III-V nanowires
- GaAs/GaAsSb axial heterostructure nanowire
- (a) Dark field TEM image of the [111]B-oriented heterostructured GaAs/GaAsSb NW, which shows the wurtzite phase of GaAs, zinc blende phase of GaAsSb, GaAs 3C microtwin phase and GaAs 4H polytype phase, T1 and T2 denotes the lower and upper interface of GaAs/GaAsSb; (b) High Resolution TEM image of upper interface T2; (c) High Resolution TEM image of lower interface T1.
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Positioned GaAs nanowires grown by Ga-assisted MBE technique
Positioned NW growth: 30° tilted-view SEM image of GaAs NW array grown by Ga-assisted growth mechanism. The NWs are nucleated in the hole array defined into the SiO2 layer on an Si(111) substrate using electron beam lithography process and etching.
